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XTR1K1210 - High Temperature 10A 1200V SiC Schottky Diode

General Description

XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.

Key Features

  • Reverse voltage up to 1200V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Positive temperature coefficient for safe operation and ease paralleling.
  • Extremely fast switching not dependent on temperature.
  • Essentially no reverse or forward recovery.
  • Ruggedized thru-hole packages.

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Datasheet Details

Part number XTR1K1210
Manufacturer EASii
File Size 438.13 KB
Description High Temperature 10A 1200V SiC Schottky Diode
Datasheet download datasheet XTR1K1210 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XTR1K1210 High Temperature 10A, 1200V SiC Schottky Diode Data Sheet Rev 3 – June 2024 (DS-00275-12) PRODUCTION XTRPPPPP YYWWANN TO257-3 XTR1K1210 FEATURES • Reverse voltage up to 1200V. • Operational beyond the -60°C to +230°C temperature range. • Positive temperature coefficient for safe operation and ease paralleling. • Extremely fast switching not dependent on temperature. • Essentially no reverse or forward recovery. • Ruggedized thru-hole packages. APPLICATIONS DESCRIPTION XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.