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ZXTP07012EFF - PNP TRANSISTOR

Description

This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage.

Features

  • BVCEO > -12V.
  • IC = -4A Continuous Collector Current.
  • Low Saturation Voltage VCE(SAT) < 75mV @ 1A.
  • RCE(SAT) = 50mΩ.
  • hFE Characterised Up to -6A.
  • High hFE Min 400 @ 1A.
  • 1.5W Power Dissipation.
  • Complementary NPN Type: ZXTN07012EFF.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription

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ZXTP07012EFF 12V PNP LOW SATURATION TRANSISTOR IN SOT23F Features  BVCEO > -12V  IC = -4A Continuous Collector Current  Low Saturation Voltage VCE(SAT) < 75mV @ 1A  RCE(SAT) = 50mΩ  hFE Characterised Up to -6A  High hFE Min 400 @ 1A  1.5W Power Dissipation  Complementary NPN Type: ZXTN07012EFF  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
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