Datasheet4U Logo Datasheet4U.com

ZXTP05120HFF - PNP TRANSISTOR

Description

This high performance PNP Darlington transistor is designed for applications requiring high gain and very low saturation voltage.

Features

  • BVCEO > -120V.
  • IC = -1A Continuous Collector Current.
  • Saturation Voltage VCE(SAT) < -1.1V @ -1A.
  • hFE Characterized Up to -6A.
  • High hFE (Min) = 3,000 @ -1A.
  • 1.5W Power Dissipation.
  • Complementary NPN Type: ZXTN04120HFF.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZXTP19020CFF PNP medium power transistor Zetex Semiconductors
ZXTP19060CFF PNP medium power transistor Zetex Semiconductors
ZXTP19060CZ 60V PNP medium transistor Zetex Semiconductors
ZXTP19060CZTA 60V PNP medium transistor Zetex Semiconductors
ZXTP19100CFF PNP medium power transistor Zetex Semiconductors

Other Datasheets by Diodes Incorporated

Part Number Description
ZXTP03200BG 200V PNP transistor
ZXTP03200BZ 200V PNP LOW Vce TRANSISTOR
ZXTP07012EFF PNP TRANSISTOR
ZXTP07040DFF PNP TRANSISTOR
ZXTP08400BFF 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR

Full PDF Text Transcription

Click to expand full text
ZXTP05120HFF 120V PNP MEDIUM POWER DARLINGTON TRANSISTOR IN SOT23F Features  BVCEO > -120V  IC = -1A Continuous Collector Current  Saturation Voltage VCE(SAT) < -1.1V @ -1A  hFE Characterized Up to -6A  High hFE (Min) = 3,000 @ -1A  1.5W Power Dissipation  Complementary NPN Type: ZXTN04120HFF  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description This high performance PNP Darlington transistor is designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
Published: |