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ZXTN620MA - 80V NPN LOW SATURATION TRANSISTOR

Features

  • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage (185mV max @ 1A) RSAT = 68 mΩ for a low equivalent On-Resistance hFE specified up to 5A for high current gain hold up Low profile 0.6mm high package for thin.

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Full PDF Text Transcription (Reference)

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A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage (185mV max @ 1A) RSAT = 68 mΩ for a low equivalent On-Resistance hFE specified up to 5A for high current gain hold up Low profile 0.6mm high package for thin applications RθJA efficient, 60% lower than SOT23 2 4mm footprint, 50% smaller than SOT23 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • Case: DFN2020B-3 Case Material: Molded Plastic. “Green” Molding Compound. Terminals: Pre-Plated NiPdAu leadframe. Nominal Package Height: 0.
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