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ZXTN619MA - 50V NPN LOW SATURATION TRANSISTOR

Features

  • BVCEO > 50V.
  • IC = 4A Continuous Collector Current.
  • Low Saturation Voltage (100mV max @1A).
  • RSAT = 68mΩ for a Low Equivalent On-Resistance.
  • hFE Specified up to 6A for High Current Gain Hold Up.
  • Low Profile 0.6mm High Package for Thin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR IN U-DFN2020-3 Features • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @1A) • RSAT = 68mΩ for a Low Equivalent On-Resistance • hFE Specified up to 6A for High Current Gain Hold Up • Low Profile 0.6mm High Package for Thin Applications • RJA Efficient, 60% Lower than SOT23 • 4mm2 Footprint, 50% Smaller than SOT23 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.
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