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ZXTN2038F - 80V NPN transistor

Description

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

Features

  • Low saturation voltage for reduced power dissipation.
  • 1 to 2 amp high current capability.
  • Pb-free.
  • SOT23 package.

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📁 Similar Datasheet

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Other Datasheets by Diodes Incorporated

Part Number Description
ZXTN2031F 50V NPN MEDIUM POWER TRANSISTOR
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Full PDF Text Transcription

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A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V(BR)CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features • Low saturation voltage for reduced power dissipation • 1 to 2 amp high current capability • Pb-free • SOT23 package Applications • Power MOSFET gate driving • Low loss power switching Ordering information Device ZXTN2038FTA ZXTN2038FTC Reel size 7” 13” Tape width 8mm 8mm Quantity per reel 3,000 10,000 Device marking N38 Issue 4 - January 2009 © Diodes Incorporated, 2008 1 www.zetex.com www.
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