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ZXTN2010G - NPN Transistor

Features

  • BVCEO > 60V.
  • IC = 6A Continuous Collector Current.
  • ICM = 20A Peak Pulse Current.
  • Low Saturation Voltage VCE(SAT) < 60mV Max @ 1A.
  • RSAT = 35mΩ @ Ic =6A for Low Equivalent On-Resistance.
  • hFE Specified up to 10A for High Gain Hold Up.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT223.
  • Case Material: Molded Plast.

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Full PDF Text Transcription

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Green ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR SOT223 Features  BVCEO > 60V  IC = 6A Continuous Collector Current  ICM = 20A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < 60mV Max @ 1A  RSAT = 35mΩ @ Ic =6A for Low Equivalent On-Resistance  hFE Specified up to 10A for High Gain Hold Up  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT223  Case Material: Molded Plastic. “Green” Molding Compound; UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208  Weight: 0.
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