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ZXTN2011Z - NPN Transistor

Features

  • BVCEO > 100V.
  • IC = 4.5A high Continuous Current.
  • ICM = 10A Peak Pulse Current.
  • RCE(sat) = 31mΩ for a low equivalent On-Resistance.
  • Low saturation voltage VCE(sat) < 60mV @ IC = 1A.
  • hFE specified up to 10A for high current gain hold up.
  • Lead-Free Finish; RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Ca.

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Full PDF Text Transcription

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A Product Line of Diodes Incorporated   Green ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > 100V • IC = 4.5A high Continuous Current • ICM = 10A Peak Pulse Current • RCE(sat) = 31mΩ for a low equivalent On-Resistance • Low saturation voltage VCE(sat) < 60mV @ IC = 1A • hFE specified up to 10A for high current gain hold up • Lead-Free Finish; RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT89 • Case material: molded plastic. “Green” molding compound. • UL Flammability Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 • Weight: 0.
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