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ZXMHC6A07N8 - MOSFET H-Bridge

Description

This new generation complementary MOSFET H-Bridge

Features

  • low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features.
  • 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D.

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Full PDF Text Transcription

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www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 0.25Ω @ VGS= 10V N-CH 60V 3.2nC 0.35Ω @ VGS= 4.5V 0.40Ω @ VGS= -10V P-CH -60V 5.1nC 0.60Ω @ VGS= -4.5V -1.2A 1.5A -1.4A ID TA= 25°C 1.8A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D Applications • • DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC6A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 6A07 Issue 1.0 - March 2009 © Diodes Incorporated 1 www.diodes.com www.DataSheet4U.
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