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DXTP560BP5 - PNP Transistor

Key Features

  • BVCEO > -500V.
  • IC = -150mA Continuous Collector Current.
  • 47% smaller than SOT223; 60% smaller than TO252 (D-PAK).
  • Profile height just 1.1mm for thin.

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Other Datasheets by Diodes Incorporated

Part Number Description
DXTP58100CFDB 100V PNP Transistor
DXTP5820CFDB -20V PNP TRANSISTOR
DXTP5840CFDB 40V PNP TRANSISTOR
DXTP5860CFDB 60V PNP TRANSISTOR
DXTP03200BP5 200V PNP HIGH VOLTAGE TRANSISTOR
DXTP07025BFG 25V PNP HIGH PERFORMANCE TRANSISTOR
DXTP07025BFGQ 25V PNP LOWSAT TRANSISTOR
DXTP07040CFG 40V PNP TRANSISTOR
DXTP07060BFG 60V PNP HIGH PERFORMANCE TRANSISTOR
DXTP07100BFG 100V PNP HIGH PERFORMANCE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION A Product Line of Diodes Incorporated DXTP560BP5 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI®5 Features and Benefits • BVCEO > -500V • IC = -150mA Continuous Collector Current • 47% smaller than SOT223; 60% smaller than TO252 (D-PAK) • Profile height just 1.1mm for thin application • RθJA efficient giving high PD rating up to 2.8W • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free, "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: POWERDI®5 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – Matte Tin annealed over Copper leadframe.