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DXTP5820CFDB - -20V PNP TRANSISTOR

Key Features

  • BVCEO > -20V.
  • hFE Specified up to -6A for High Current Gain Hold Up.
  • Low Profile 0.6mm High Package for Thin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DXTP5820CFDB -20V PNP LOW SATURATION TRANSISTOR IN U-DFN2020-3 Features  BVCEO > -20V  hFE Specified up to -6A for High Current Gain Hold Up  Low Profile 0.6mm High Package for Thin Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.