Datasheet Details
| Part number | DMT6010LFG |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 494.21 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 DMT6010LFG Datasheet
|
|
|
General Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- Low RDS(ON).
- Ensures On-State Losses Are Minimized.
- Excellent QGD X RDS(ON) Product (FOM).
- Advanced Technology for DC-DC Converters.
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
- Occupies Just 33% of The Board Area Occupied by SO-8, Enabling Smaller End Product.
- 100% Unclamped Inductive Switching (UIS) Test in Production.
- Ensures More Reliable And Robust End.
