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DMT6011LSS - 60V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

High Frequency Switching Synchronous Rectification DC-DC Converters SO-8 S Featu

Key Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription for DMT6011LSS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT6011LSS. For precise diagrams, and layout, please refer to the original PDF.

DMT6011LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary BVDSS 60V RDS(ON) Max 11mΩ @ VGS = 10V 14.5mΩ @ VGS = 4.5V ID Max TA = +25°C 10.6A 9...

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ON) Max 11mΩ @ VGS = 10V 14.5mΩ @ VGS = 4.5V ID Max TA = +25°C 10.6A 9.5A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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