DMP3160L - P-Channel MOSFET

Diodes Incorporated

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

Low On-Resistance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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DMP3160L p-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMP3160L
Manufacturer	Diodes Incorporated
File Size	510.79 KB
Description	P-Channel MOSFET
Datasheet	DMP3160L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) 122mΩ @ VGS = -10V 190mΩ @ VGS = -4.5V ID TA = +25°C -2.7A -2.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.