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DMP3100L - P-Channel MOSFET

Key Features

  • Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Lead Free By Design/RoHS Compliant (Note 2).
  • "Green" Device (Note 4).
  • Qualified to AEC-Q101 Standards for High Reliability SOT-23 Gate Mechanical Data.
  • Case: SOT-23.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMP3100L P-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability SOT-23 Gate Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.