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DMN5L06VAK - DUAL N-CHANNEL TRANSISTOR

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • ESD Protected up to 2kV.
  • Qualified to AEC-Q101 Standards for High Reliability DMN5/L06VK/L06VAK/010VAK DUAL N-.

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Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  ESD Protected up to 2kV  Qualified to AEC-Q101 Standards for High Reliability DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data  Case: SOT563  Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.