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DMN5L06K - N-Channel MOSFET

General Description

This new generation 50V N-channel enhancement mode MOSFET is designed to minimize RDS(on) yet maintain superior switching performance.

This device is ideal for use in Notebook battery power management and load switches.

Load Switches Level Switches Mechanical Da

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage (1.0V max).
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected Up To 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • For automotive.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 50V R DS(ON) 2.0Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300mA 200mA Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.