Full PDF Text Transcription for DP8205C (Reference)
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DP8205C. For precise diagrams, and layout, please refer to the original PDF.
DP8205C www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev1.0 DP8205 uses advanced trench technology to provide excellent RDS(O...
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v1.0 DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 16 V 5.0A < 29mΩ < 34mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Li
DP8205C Datasheet