DP8205B - Dual N-Channel Enhancement Power MOSFET

General Description

DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

📥 Download Datasheet

DP8205B dual n-channel enhancement power mosfet by DEVELOPER MICROELECTRONICS - Datasheet Preview

Datasheet Details

Part number	DP8205B
Manufacturer	DEVELOPER MICROELECTRONICS
File Size	908.96 KB
Description	Dual N-Channel Enhancement Power MOSFET
Datasheet	DP8205B Datasheet

Full PDF Text Transcription for DP8205B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DP8205B. For precise diagrams, and layout, please refer to the original PDF.

DP8205B www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev1.0 DP8205B uses advanced trench technology to provide excellent RDS(...

View more extracted text

v1.0 DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20 V 6.5A < 22mΩ < 27mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG L

More Datasheets from DEVELOPER MICROELECTRONICS

Part Number	Description
DP8205	Dual N-Channel Enhancement Power MOSFET
DP8205C	N-Channel MOSFET
DP8N60	N-Channel MOSFET