Datasheet Details
| Part number | DMT10H009LFG |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 475.76 KB |
| Description | 100V N-CHANNEL MOSFET |
| Datasheet |
 DMT10H009LFG Datasheet
|
|
|
General Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Key Features
- Low RDS(ON).
- Ensures On State Losses are Minimized.
- Excellent Qgd x RDS (ON) Product (FOM).
- Advanced Technology for DC/DC Converters.
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
- 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End.