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DMT10H003SPSW - 100V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable an

Key Features

  • BVDSS 100V RDS(ON) Max 3mΩ @ VGS = 10V 5mΩ @ VGS = 6V ID Max TC = +25°C 152A 118A.

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Full PDF Text Transcription for DMT10H003SPSW (Reference)

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DMT10H003SPSW Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS 100V RDS(ON) Max 3mΩ @ VGS = 10V 5mΩ @ VGS = 6V ID Max TC = +25°C ...

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DSS 100V RDS(ON) Max 3mΩ @ VGS = 10V 5mΩ @ VGS = 6V ID Max TC = +25°C 152A 118A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Wettable Flank for Improved Optical Inspection  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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