DG7N65 - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

DG7N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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DG7N65 n-channel enhancement mode mosfet by DGME - Datasheet Preview

Datasheet Details

Part number	DG7N65
Manufacturer	DGME
File Size	907.17 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DG7N65 Datasheet

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DG7N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG7N65N，，，，，。，，。 DG7N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 7 1.