DG730 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
| Part number | DG730 |
|---|---|
| Manufacturer | DGME |
| File Size | 725.52 KB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
 DG730 Datasheet
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| DG7-31 | LOW VOLTAGE CATHODE RAY TUBE | NXP Semiconductors |
| DG7-32 | LOW VOLTAGE CATHODE RAY TUBE | NXP Semiconductors |
| DG758BX45 | Gate Turn-off Thyristor | Dynex |
| DG75X12T2 | IGBT | STARPOWER |
| Part Number | Description |
|---|---|
| DG740 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG75N75 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG7N60 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG7N65 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG7N80 | N-CHANNEL ENHANCEMENT MODE MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
