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BTC2411N3 - Gentral Purpose NPN Epitaxial Planar Transistor

Description

The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application.

High IC(Max), IC(Max) = 0.6A.

Low VCE(sat) , Typ.

VCE(sat) = 0.4V at IC/IB = 500mA/50mA.

Optimal for low Voltage operation.

Complementary to BTA1036N

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Datasheet Details

Part number BTC2411N3
Manufacturer Cystech Electonics
File Size 313.52 KB
Description Gentral Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2411N3 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.03.09 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description • The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High IC(Max), IC(Max) = 0.6A. • Low VCE(sat) , Typ. VCE(sat) = 0.4V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. • Complementary to BTA1036N3.
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