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BTC2411L3 - Gentral Purpose NPN Epitaxial Planar Transistor

Description

The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application.

High IC(Max), IC(Max) = 0.6A.

Low VCE(sat) , Typ.

VCE(sat) = 0.3V at IC/IB = 500mA/50mA.

Optimal for low Voltage operation.

Complementary to BTA1036L

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Datasheet Details

Part number BTC2411L3
Manufacturer Cystech Electonics
File Size 187.46 KB
Description Gentral Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2411L3 Datasheet

Full PDF Text Transcription

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www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC2411L3 Description • The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High IC(Max), IC(Max) = 0.6A. • Low VCE(sat) , Typ. VCE(sat) = 0.3V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. • Complementary to BTA1036L3. Symbol BTC2411L3 Outline SOT-223 C E B:Base C:Collector E:Emitter C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 75 40 6 0.
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