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S29WS512P - Simultaneous Read/Write Flash

Features

  • Single 1.8 V read/program/erase (1.70.
  • 1.95 V).
  • 90 nm MirrorBit™ Technology.
  • Simultaneous Read/Write operation with zero latency.
  • Random page read access mode of 8 words with 20 ns intra page access time.
  • 32 Word / 64 Byte Write Buffer.
  • Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively.
  • Four 16 Kword sectors at both top and bottom of memory array.
  • 510/254/126 64Kword sectors (WS512/256/128P).
  • Programmable li.

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Other Datasheets by Cypress (Infineon)

Part Number Description
S29WS128P Simultaneous Read/Write Flash
S29WS256P Simultaneous Read/Write Flash
S29AL008D Boot Sector Flash
S29AL008J Boot Sector Flash Memory
S29AL016D Boot Sector Flash

Full PDF Text Transcription

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S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash Features  Single 1.8 V read/program/erase (1.70–1.
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