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S29AL008D - Boot Sector Flash

Description

The S29AL008D is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words.

The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages.

For more information, refer to publication number 21536.

DQ0; the byte-wi

Features

  • of the Am29LV800B, which was manufactured using 0.32 µm process technology. The standard device offers access times of 55, 60, 70, and 90 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device contains separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the progr.

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📁 Similar Datasheet

Part Number Description Manufacturer
S29AL008D 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory SPANSION
S29AL008J 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory SPANSION
S29AL004D 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory SPANSION
S29AL016D 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY SPANSION
S29AL016J 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Spansion

Other Datasheets by Cypress (Infineon)

Part Number Description
S29AL008J Boot Sector Flash Memory
S29AL016D Boot Sector Flash
S29AL016J Boot Sector Flash
S29AS008J Boot Sector Flash
S29AS016J Boot Sector Flash

Full PDF Text Transcription

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S29AL008D 8-Mbit (1M x 8-Bit/512K x 16-Bit), 3 V Boot Sector Flash This product has been retired and is not recommended for designs. For new and current designs, S29AL008J supercedes S29AL008D. This is the factory-recommended migration path. Please refer to the S29AL008J data sheet for specifications and ordering information. Distinctive Characteristics Architectural Advantage  Single Power Supply Operation – 2.7 to 3.6 volt read and write operations for battery-powered applications  Manufactured on 200 nm Process Technology – Compatible with 0.
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