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S29GL512S - 3.0V GL-S Flash Memory

This page provides the datasheet information for the S29GL512S, a member of the S29GL01GS 3.0V GL-S Flash Memory family.

Description

The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology.

These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns.

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Datasheet preview – S29GL512S

Datasheet Details

Part number S29GL512S
Manufacturer Cypress Semiconductor
File Size 1.50 MB
Description 3.0V GL-S Flash Memory
Datasheet download datasheet S29GL512S Datasheet
Additional preview pages of the S29GL512S datasheet.

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Full PDF Text Transcription

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S29GL01GS, S29GL512S S29GL256S, S29GL128S 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.0V GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics  CMOS 3.
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