Datasheet4U Logo Datasheet4U.com

S29GL01GS - 3.0V GL-S Flash Memory

Datasheet Summary

Description

The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology.

These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns.

📥 Download Datasheet

Datasheet preview – S29GL01GS

Datasheet Details

Part number S29GL01GS
Manufacturer Cypress Semiconductor
File Size 1.50 MB
Description 3.0V GL-S Flash Memory
Datasheet download datasheet S29GL01GS Datasheet
Additional preview pages of the S29GL01GS datasheet.

📁 Similar Datasheet

  • S29GL01GS - 1Gb Flash Memory (Infineon)
  • S29GL01GS - 1-Gbit Non-Volatile Memory (SPANSION)
  • S29GL01GP - Page Mode Flash Memory (SPANSION)
  • S29GL01GT - 1Gb (128MB) GL-T Flash (Infineon)
  • S29GL016A - 16 Megabit 3.0-Volt only Page Mode Flash Memory (SPANSION)
  • S29GL032A - 32 Megabit 3.0-Volt only Page Mode Flash Memory (SPANSION)
  • S29GL032M - 3.0V single power Flash memory (SPANSION)
  • S29GL032N - (S29GLxxxN) 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology (SPANSION)
  • S29GL064A - 64 Megabit 3.0-Volt only Page Mode Flash Memory (SPANSION)
  • S29GL064M - 3.0V single power Flash memory (SPANSION)
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
S29GL01GS, S29GL512S S29GL256S, S29GL128S 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.0V GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics  CMOS 3.
Published: |