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CYU01M16SFE - 16-Mbit (1M x 16) Pseudo Static RAM

Description

of read and write modes.

The CYU01M16SFE is a high-performance CMOS Pseudo Static RAM organized as 1M words by 16 bits that supports an asynchronous memory interface.

Features

  • Wide voltage range: 1.7V.
  • 1.95V.
  • Access Time: 70 ns.
  • Ultra-low active power.
  • Typical active current: 3 mA @ f = 1 MHz.
  • Typical active current: 18 mA @ f = fmax.
  • Ultra low standby power.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Available in 48-ball BGA package.
  • Operating Temperature:.
  • 40°C to +85°C portable.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYU01M16SFE MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power • Available in 48-ball BGA package • Operating Temperature: –40°C to +85°C portable applications such as cellular telephones. The device can be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).
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