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65A
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CYM1465A
512K x 8 PDIP Static RAM
Features
• • • • • • • • 4.5V–5.5V operation CMOS SRAM for optimum speed and power Low active power (165 mW max.) Low standby power (L Version)—(110 µW max) 2V data retention (L Version) JEDEC-compatible pinout 32-pin, 0.6-inch-wide DIP package TTL-compatible inputs and outputs an automatic power-down feature that reduces power consumption by more than 99% when deselected. Writing to the SRAM is accomplished when the chip select (CS) and write enable (WE) inputs are both LOW. Data on the eight input/output pins (I/O0 through I/O7) of the device is then written into the memory location specified on the address pins (A0 through A18).