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CY7C1423AV18 - 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture

Download the CY7C1423AV18 datasheet PDF. This datasheet also covers the CY7C1422AV18 variant, as both devices belong to the same 36-mbit ddr-ii sio sram 2-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

Description

The CY7C1422V18, CY7C1429AV18, CY7C1423V18, CY7C1424V18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II SIO (Double Data Rate Separate I/O) architecture.

The DDR-II SIO consists of two separate ports to access the memory array.

Features

  • 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36).
  • 300-MHz clock for high bandwidth.
  • 2-Word burst for reducing address bus frequency.
  • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.
  • Echo clocks (CQ and CQ) simplify data captu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1422AV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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CY7C1011G 2-Mbit (128K words x 16 bit) Static RAM Cypress
CY7C1041G 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1423BV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1423JV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1423KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture
CY7C142 2K x 8 Dual-Port Static RAM
CY7C1420AV18 (CY7C14xxAV18) 36-Mbit DDR-II SRAM 2-Word Burst Architecture

Full PDF Text Transcription

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CY7C1422AV18 CY7C1429AV18 CY7C1423AV18 CY7C1424AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features • 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36) • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches • Echo clocks (CQ and CQ) simplify data capture in high-speed systems • Synchronous internally self-timed writes • 1.8V core power supply with HSTL inputs and outputs • Variable drive HSTL output buffers • Expanded HSTL output voltage (1.4V–VDD) • Available in 165-ball FBGA package (15 x 17 x 1.
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