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CY7C1245KV18 - 36-Mbit QDR II SRAM 4-Word Burst Architecture

Download the CY7C1245KV18 datasheet PDF. This datasheet also covers the CY7C1241KV18 variant, as both devices belong to the same 36-mbit qdr ii sram 4-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

Description

The CY7C1241KV18, CY7C1256KV18, CY7C1243KV18, and CY7C1245KV18 are 1.8 V synchronous pipelined SRAMs, equipped with QDR II+ architecture.

Features

  • Configurations With Read Cycle Latency of 2.0 cycles: CY7C1241KV18.
  • 4 M × 8 CY7C1256KV18.
  • 4 M × 9 CY7C1243KV18.
  • 2 M × 18 CY7C1245KV18.
  • 1 M × 36 Separate independent read and write data ports.
  • Supports concurrent transactions 450 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double data rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz Available in 2.0 clock cycle latency Two.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1241KV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C12451KV18 36-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C12411KV18 36-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1241KV18 36-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1241V18 36-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C12431KV18 36-Mbit QDR II SRAM 4-Word Burst Architecture

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C1241KV18, CY7C1256KV18 CY7C1243KV18, CY7C1245KV18 ® Features ■ Configurations With Read Cycle Latency of 2.0 cycles: CY7C1241KV18 – 4 M × 8 CY7C1256KV18 – 4 M × 9 CY7C1243KV18 – 2 M × 18 CY7C1245KV18 – 1 M × 36 Separate independent read and write data ports ❐ Supports concurrent transactions 450 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double data rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz Available in 2.
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