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CY7C1041BV33 Datasheet 256K x 16 Static RAM

Manufacturer: Cypress (now Infineon)

Download the CY7C1041BV33 datasheet PDF. This datasheet also includes the CY7 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7-C1041B.pdf) that lists specifications for multiple related part numbers.

General Description

of read and write modes.

The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1041BV33 is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout.

Overview

041BV33 CY7C1041BV33 256K x 16 Static RAM.

Key Features

  • High speed.
  • tAA = 12 ns.
  • Low active power.
  • 612 mW (max. ).
  • Low CMOS standby power (Commercial L version).
  • 1.8 mW (max. ).
  • 2.0V Data Retention (600 µW at 2.0V retention).
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs.
  • Easy memory expansion with CE and OE features written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from.

More Datasheets from Cypress (now Infineon)

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