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1CY 622 56 V
fax id: 1069
PRELIMINARY
CY62256V
32K x 8 Static RAM
Features
• • • • • • • • 55, 70 ns access time CMOS for optimum speed/power Wide voltage range: 2.7V−3.6V Low active power (70 ns, LL version) — 108 mW (max.) Low standby power (70 ns, LL version) — 18 µW (max.) Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 98% when deselected. The CY62256V is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and reverse TSOP packages. An active LOW write enable signal (WE) controls the writing/reading operation of the memory.