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CY62177EV18 - 32-Mbit (2 M x 16 / 4 M x 8) Static RAM

Description

The CY62177EV18 is a high-performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits.

Features

  • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM).
  • Very high speed.
  • 70 ns.
  • Wide voltage range.
  • 1.65 V to 2.25 V.
  • Ultra low standby power.
  • Typical standby current: 3 A.
  • Maximum standby current: 25 A.
  • Ultra low active power.
  • Typical active current: 4.5 mA at f = 1 MHz.
  • Easy memory expansion with CE1, CE2, and OE Features.
  • Automatic power-down when deselected.
  • Complementary metal oxide sem.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62177EV30 32-Mbit (2M x 16) Static
CY62177ESL 32-Mbit (2 M x 16/4 M x 8) Static RAM
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CY62177DV30 32-Mbit (2M x 16) Static RAM
CY62126ESL 1-Mbit (64 K x 16) Static RAM

Full PDF Text Transcription

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CY62177EV18 MoBL® 32-Mbit (2 M × 16 / 4 M × 8) Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features ■ Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 70 ns ■ Wide voltage range ❐ 1.65 V to 2.25 V ■ Ultra low standby power ❐ Typical standby current: 3 A ❐ Maximum standby current: 25 A ■ Ultra low active power ❐ Typical active current: 4.
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