CY62148G Datasheet 4-Mbit (512K words x 8 bit) Static RAM

Manufacturer: Cypress (now Infineon)

CY62148G 4-mbit (512k words x 8 bit) static ram by Cypress (now Infineon) - Datasheet Preview

Datasheet Details

Part number	CY62148G
Manufacturer	Cypress (now Infineon)
File Size	714.54 KB
Description	4-Mbit (512K words x 8 bit) Static RAM
Datasheet	CY62148G Datasheet

General Description

CY62148G is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC[1].

This device is offered multiple pin configurations.

Device is accessed by asserting the chip enable (CE) input LOW.

Overview

CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code.

Key Features

High speed: 45 ns/55 ns.
Ultra-low standby power.
Typical standby current: 3.5 μA.
Maximum standby current: 8.7 μA.
Embedded ECC for single-bit error correction[1].
Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
1.0-V data retention.
TTL-compatible inputs and outputs.
Pb-free 32-pin SOIC and 32-pin TSOP II packages Functional.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	CY62148G	ultra-low-power RAM	Infineon
	CY62148GN	4-Mbit (512K x 8) Static RAM	Cypress

More Datasheets from Cypress (now Infineon)

Part Number	Description
CY62148	512K x 8 MoBL Static RAM
CY62148DV30	4-Mbit (512 K x 8) MoBL Static RAM
CY62148E	4-Mbit (512 K x 8) Static RAM
CY62148ESL	4-Mbit (512 K x 8) Static RAM
CY62148EV30	4-Mbit (512K x 8) Static RAM
CY62148V	512K x 8 MoBL Static RAM
CY62146CV18	256K x 16 Static RAM
CY62146CV30	256K x 16 Static RAM
CY62146E	4-Mbit (256K x 16) Static RAM
CY62146ESL	4-Mbit (256K x 16) Static RAM