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CY62147EV18 - 4-Mbit (256K x 16) Static RAM

Description

of read and write modes.

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Features

  • Very high speed: 55 ns Wide voltage range: 1.65 V to 2.25 V Pin compatible with CY62147DV18 Ultra low standby power.
  • Typical standby current: 1 A.
  • Maximum standby current: 7 A Ultra low active power.
  • Typical active current: 2 mA at f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Available in a Pb-free 48-ball ver.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62147EV18 MoBL® 4-Mbit (256K x 16) Static RAM is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), both the Byte High Enable and the Byte Low Enable are disabled (BHE, BLE HIGH), or during an active write operation (CE LOW and WE LOW). To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW.
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