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CY62138F - 2-Mbit (256K x 8) Static RAM

Description

The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits.

Features

  • High speed: 45 ns.
  • Wide voltage range: 4.5 V to 5.5 V.
  • Pin compatible with CY62138V.
  • Ultra low standby power.
  • Typical standby current: 1 A.
  • Maximum standby current: 5 A.
  • Ultra low active power.
  • Typical active current: 1.6 mA @ f = 1 MHz.
  • Easy memory expansion with CE1, CE2, and OE features.
  • Automatic power down when deselected.
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • Available in Pb-free 32-pin SOI.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62138F MoBL® 2-Mbit (256K × 8) Static RAM 2-Mbit (256K × 8) Static RAM Features ■ High speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Pin compatible with CY62138V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 5 A ■ Ultra low active power ❐ Typical active current: 1.6 mA @ f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 32-pin SOIC and 32-pin thin small outline package (TSOP) II packages Functional Description The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current.
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