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CY62136EV30 - 2-Mbit (128K x 16) Static RAM

Description

The CY62136EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits.

Features

  • Very high speed: 45 ns.
  • Wide voltage range: 2.20V.
  • 3.60V.
  • Pin-compatible with CY62136CV30.
  • Ultra low standby power.
  • Typical standby current: 1µA.
  • Maximum standby current: 7µA.
  • Ultra-low active power.
  • Typical active current: 2 mA @ f = 1 MHz.
  • Easy memory expansion with CE, and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Offered in a Pb-free 48-ba.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62136ESL 2 Mbit (128K x 16) Static RAM
CY62136CV 2M (128K x 16) Static RAM
CY62136CV18 128K x 16 Static RAM
CY62136CV30 2M (128K x 16) Static RAM
CY62136CV30 2-Mbit (128K x 16) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62136EV30 MoBL® 2-Mbit (128K x 16) Static RAM Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62136CV30 • Ultra low standby power — Typical standby current: 1µA — Maximum standby current: 7µA • Ultra-low active power — Typical active current: 2 mA @ f = 1 MHz • Easy memory expansion with CE, and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Offered in a Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description[1] The CY62136EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.
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