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CY6117A - 2K x 8 Static RAM

Download the CY6117A datasheet PDF. This datasheet also covers the CY6 variant, as both devices belong to the same 2k x 8 static ram family and are provided as variant models within a single manufacturer datasheet.

Description

the memory location specified on the adĆ dress pins (A0 through A10).

Features

  • D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY611.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY6-116.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY6116A 2K x 8 Static RAM
CY62126ESL 1-Mbit (64 K x 16) Static RAM
CY62126EV30 1-Mbit (64K x 16) Static RAM
CY62127DV30 1-Mbit (64K x 16) Static RAM
CY62128 128K x 8 Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY6117A have an automatic powerĆdown feature, reducing the power consumption by 83% when deĆ selected. Writingtothedeviceisaccomplishedwhen the chip enable (CE) and write enable (WE) inputs are both LOW.
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