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PE8688W - N-Channel Enhancement Mode Power MOSFET

Description

The PE8688W uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V, ID =90A RDS(ON) < 9.5mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired PE8688W.

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Datasheet preview – PE8688W

Datasheet Details

Part number PE8688W
Manufacturer ChipSourceTek
File Size 1.82 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8688W Datasheet
Additional preview pages of the PE8688W datasheet.

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Full PDF Text Transcription

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PE8688W N-Channel Enhancement Mode Power MOSFET PE8688W Description The PE8688W uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE8688W General Features ● VDS =60V, ID =90A RDS(ON) < 9.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired PE8688W Application ● PWM applications ● Load switch ● Power management Schematic diagram Marking and pin assignment ChipSourceTek TO-247 PE8688W Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=0.
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