Datasheet4U Logo Datasheet4U.com

PE8250M - N-Channel Enhancement Mode Power MOSFET

Description

The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

📥 Download Datasheet

Datasheet preview – PE8250M

Datasheet Details

Part number PE8250M
Manufacturer ChipSourceTek
File Size 772.37 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8250M Datasheet
Additional preview pages of the PE8250M datasheet.

📁 Similar Datasheet

  • PE8200 - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE8200 - Trimer (PE)
  • PE8203 - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE8203A - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE8205 - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE8205A - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE8050 - NPN-PNP General Purpose Complementary Amplifiers & Output Drivers (Fairchild Semiconductor)
  • PE80H11 - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE80H13 - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE80Q04N - SBD MODULE (Nihon Inter Electronics)
Other Datasheets by ChipSourceTek
  • PE8250K - N-Channel Enhancement Mode Power MOSFET
  • PE8205 - N-Channel Enhancement Mode Power MOSFET
  • PE8205A - N-Channel Power MOSFET
  • PE8205L - N-Channel Power MOSFET
  • PE8207 - N-Channel Enhancement Mode Power MOSFET
  • PE8207C - N-Channel Power MOSFET
  • PE8209HM1 - N-Channel Enhancement Mode Power MOSFET
  • PE8209HN - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode Power MOSFET Description The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PE8250M General Features ● VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package k Application ● PWM applications e ● Load switch ● Power management T ● Battery Protection Marking and pin assignment rcePDFN3.3x3.
Published: |