Datasheet4U Logo Datasheet4U.com

JMTK2006A - N-channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

JMTK2006A JMT N-channel Enhancement Mode Power MOSFET

Features

  • 20V, 60A RDS(ON) < 6.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 2.5V.
  • Advanced Trench Technology.
  • Excellent RDS(ON) and Low Gate Charge.
  • Lead free product is acquired.

📥 Download Datasheet

Datasheet preview – JMTK2006A

Datasheet Details

Part number JMTK2006A
Manufacturer ChipSourceTek
File Size 1.04 MB
Description N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet JMTK2006A Datasheet
Additional preview pages of the JMTK2006A datasheet.

📁 Similar Datasheet

  • JMTK170N10A - N-channel Enhancement Mode Power MOSFET (JIEJIE)
  • JMTK50N06B - N-channel Power Trench MOSFET (JIEJIE)
  • JMTG170N06A - N-channel Enhancement Mode Power MOSFET (JIEJIE)
  • JMTG320N10A - N-channel Enhancement Mode Power MOSFET (JIEJIE)
  • JMTP085P02A - P-channel Enhancement Mode Power MOSFET (JIEJIE)
  • JMTP120C03D - N And P-Channel Enhancement Mode MOSFET (JIEJIE)
  • JMTP130P04A - P-channel Enhancement Mode Power MOSFET (JIEJIE)
  • JMTP160P03D - Dual P-channel Enhancement Mode Power MOSFET (JIEJIE)
  • JMTP4435A - P-channel Enhancement Mode Power MOSFET (JIEJIE)
  • JMTP9435A - P-channel Enhancement Mode Power MOSFET (JIEJIE)
Other Datasheets by ChipSourceTek

Full PDF Text Transcription

Click to expand full text
Description JMTK2006A JMT N-channel Enhancement Mode Power MOSFET Features  20V, 60A RDS(ON) < 6.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 2.
Published: |