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CEM8958 - Dual Enhancement Mode Field Effect Transistor(N and P Channel)

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Chino-Excel Technology

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CEM8958 Dual Enhancement Mode Field Effect Transistor(N and P Channel) by Chino-Excel Technology - Datasheet Preview — Datasheet preview – CEM8958

Datasheet Details

Part number	CEM8958
Manufacturer	Chino-Excel Technology
File Size	192.16 KB
Description	Dual Enhancement Mode Field Effect Transistor(N and P Channel)
Datasheet	CEM8958 Datasheet
Note	This datasheet PDF includes multiple part numbers: CEM8958, CEM8958_Chino. Please refer to the document for exact specifications by model.
Additional preview pages of the CEM8958 datasheet.

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Features

30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 87 65 5 SO-8 1 1234 S1 G1 S2 G2.

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Published: Mar 23, 2005 |