CEM8958A - Dual Enhancement Mode Field Effect Transistor

Product Overview

CET

Part number	CEM8958A
Manufacturer	CET
File Size	564.82 KB
Description	Dual Enhancement Mode Field Effect Transistor
Datasheet	CEM8958A Datasheet
Additional preview pages of the CEM8958A datasheet.

30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. SOP-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2.

📁 Similar Datasheet

CEM8958 - Dual Enhancement Mode Field Effect Transistor(N and P Channel) (Chino-Excel Technology)
CEM8912 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM8933 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM8938 - Dual MOSFET (Chino-Excel Technology)
CEM8947 - Dual P-Channel Enhancement Mode MOSFET (Chino-Excel Technology)
CEM820 - Type 2 Module (Axiomtek)
CEM8206 - Dual N-Channel MOSFET (Chino-Excel Technology)
CEM8207 - Dual N-Channel MOSFET (Chino-Excel Technology)

Other Datasheets by CET

Published: Oct 8, 2015 |