CEB6060R - N-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology
Download the CEB6060R datasheet PDF.
This datasheet also covers the CEB6060R_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S.
Note: The manufacturer provides a single datasheet file (CEB6060R_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.
Datasheet Details
Part number
CEB6060R
Manufacturer
Chino-Excel Technology
File Size
387.98 KB
Description
N-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription for CEB6060R (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CEB6060R. For precise diagrams, and layout, please refer to the original PDF.
CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON)....
View more extracted text
mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 50 IDM 200 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 88 0.
CEB6060R Datasheet
