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CP712 - PNP Transistor

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www.DataSheet4U.com PROCESS Power Transistor CP712 Central TM PNP - Amp/Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,960 PRINCIPAL DEVICE TYPES CZT7120 EPITAXIAL PLANAR 75 x 75 MILS 9.0 MILS 17 x 12 MILS 31 x 12 MILS Al - 30,000Å Ti/Ni/Ag - 11,300Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) www.DataSheet4U.com Central TM PROCESS CP712 Semiconductor Corp. Typical Electrical Characteristics The Typical Electrical Characteristics data for this chip is currently being revised.
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