CMPDM8002A - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Central Semiconductor

Description

The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

Features

Low rDS(ON).
Low VDS(ON).
Low threshold voltage.
Fast switching.
Logic level compatibility SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.0 500 UNITS V V V mA mA A A mW °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω SOT-23 CASE.

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CMPDM8002A surface mount p-channel enhancement-mode silicon mosfet by Central Semiconductor - Datasheet Preview

Datasheet Details

Part number	CMPDM8002A
Manufacturer	Central Semiconductor
File Size	346.66 KB
Description	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet	CMPDM8002A Datasheet

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Full PDF Text Transcription

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CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802A FEATURES: • Low rDS(ON) • Low VDS(ON) • Low threshold voltage • Fast switching • Logic level compatibility SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.

Published: Mar 29, 2011 |