CMPD1001A
DESCRIPTION
:
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, MON ANODE MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22
MAXIMUM RATINGS (TA=25o C) SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ,Tstg ΘJA UNITS V m A m A m A m A m A m W o C o C/W
Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
90 250 600 600 6000 1000 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS (TA=25o C unless otherwise noted) SYMBOL BVR IR IR VF TEST CONDITIONS IR=100 µA VR=90V VR=90V, TA=150o C IF=10m A MIN 90 MAX 100 100 0.75 UNIT V n A µA...
